Microsemi Corporation is introducing a 9Gb (gigabit) DDR3 SDRAM memory device that is the first of its kind to be packaged in a single plastic ball grid array (PBGA) and offered as a compact x72 dual in-line memory module (DIMM).
It packs up to 4GByte memory densities into smaller, faster systems used in mission-critical applications. These include secure communications, missile systems, munitions and other applications that operate in demanding environments and require extended-temperature ranges.
“Microsemi’s DDR3 SDRAM packaging further strengthens our industry-leading offering of custom and standard high-reliability, extended-temperature memory solutions,” said Jack Bogdanski, director of marketing for Microsemi. “We have more than three decades of experience in packaging techniques for military and aerospace applications. We will continue to focus on providing our customers with high-performance, high-reliability solutions that solve space and density issues.”
Microsemi’s commercial off-the-shelf (COTS) DDR3 SDRAM devices give customers a standalone, high-density memory solution that also meets the data widths necessary for their applications. The DDR3 devices significantly reduce space requirements as compared to systems built from discrete memory components, and also use less board space than memory solutions using chip scale packages (CSPs) and other single-die solutions. The memory devices also streamline input/output (I/O) routing and reduce component count and placements while delivering superior signal integrity.
Key Features
- Density — 1GByte, 9Gbits. Upgradeable to 4GBytes
- Measures only 20.5 mm x 21.5 mm
- Available in a 375 PBGA package
- Offers 30 percent space savings and 21 percent reduced I/O routing as compared to solutions with similar capabilities built from discrete components
- Supports data rates of 800, 1,066 and 1,333 megabits per second (Mb/s)
- Operates on a 1.5 volt power supply
- Available in commercial and industrial temperature ranges
Microsemi’s high-speed memories optimize performance by using a four nanosecond (ns)-prefetch architecture with an interface that allows two data words to be transmitted per clock cycle. The devices can be ruggedized and processed for tamper resistance, and are offered in densities up to 4GByte with 2x256Mx72 configurations. The company plans to offer a low-profile option that will be footprint-compatible with the current 375 PBGA package. All devices are subjected to extensive environmental and temperature testing.
Source: Press Release